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Backside Implantation

Figure: Illustration of backside implantation

Backside implantation is a process which ionizes gas molecules to be implanted with plasma, accelerates ions by electric field, bend their direction in magnetic field and finally hit them into the shallow surface of the backside wafer with high kinetic energy. This makes P-type semiconductor by implanting 3-valency ions in the wafer and N-type semiconductor by 5-valency ions.

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Case Sharing

Figure: Illustrate ion concentration by SIMS after ion implantation in the backside of wafer

Application

• Ion implantation in wafer backside.
• Wafer: 8" non-Taiko150 um and Taiko 150~50um; 6" 150um in developing.
• Type of implanter dopant: Boron (B), phosphorus (P) and arsenic (As) to be developed as required by customers.
• Energy for ion implantation: 2.4MeV with the range of 2.4 MeV~8 MeV in engineering verification process.
• Provide IGBT total solution along with the laser annealing machine provided, customized implantation and activation depth available upon request.